Al0.6Ga0.4As x-ray avalanche photodiodes for spectroscopy
نویسندگان
چکیده
منابع مشابه
Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy
Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 μm diameter, 3 μm i layer) were electrically characterised and investigated for their response to illumination with soft X-rays from an Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV). The AlGaAs photodiodes were shown to be suitable for photon counting X-ray spectroscopy at room temperature. When coupled to a cus...
متن کاملImproved x-ray detection and particle identification with avalanche photodiodes.
Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work, we report on a fitting technique used to account for different detector responses resulting from photoabsorption in the various avalanche photodiode layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2 and corrects the timing information by ...
متن کاملX-ray spectrometry with Peltier-cooled large area avalanche photodiodes
Performance characteristics of the response of a Peltier-cooled large-area avalanche photodiode are investigated. Detector gain, energy linearity, energy resolution and minimum detectable energy are studied at different operation temperatures. Detector energy resolution and lowest detectable X-ray energy present a strong improvement as the operation temperature is reduced from 25 to 15 C and sl...
متن کاملPosition-Sensitive Avalanche Photodiodes for Gamma-Ray Imaging
In this paper, we report on the investigation of silicon avalanche photodiodes (APDs) for high-energy photon imaging applications. This includes a new APD design that provides X-ray and -ray imaging with significant reduction in electronic readout requirements. This new APD design, referred to as position-sensitive avalanche photodiode (PSAPD), involves charge sharing amongst the electrodes tha...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2020
ISSN: 0268-1242,1361-6641
DOI: 10.1088/1361-6641/ab9f8e